source: trunk/simulation/FMMT619.txt

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1*FMMT619 Spice model
2*SIMULATOR=SIMETRIX
3*ORIGIN=PH
4*DATE=09April2019
5*VERSION=2
6*#SIMETRIX
7
8.Model FMMT619 NPN ; ## Description ## ## Effect ##
9
10
11
12
13 ; ## DC Forward Parameters ##
14+ IS = 5.8032E-13 ; transport saturation current Controls Icbo and where hFE falls with high Ic
15+ NF = 1.02 ; forward current emission coefficient
16+ ISE = 1.5933E-13 ; base-emitter leakage saturation current Controls the fall in hFE that occurs at low Ic
17+ NE = 1.4148 ; base-emitter leakage emission coefficient Controls Icbo and where hFE falls with high Ic. Controls the fall in hFE that occurs at low Ic
18+ BF = 465 ; ideal maximum forward beta Controls peak forward hFE
19+ IKF = 8 ; corner for forward-beta high-current roll-off Current where rollof occurs
20+ NK = 0.8 ; high-current roll-off coefficient Slope of roll off
21+ VAF = 84 ; forward Early voltage controls the variation of collector current with voltage when the transistor is operated in its linear region.
22
23 ; ## DC Reverse Parameters ##
24+ NR = 1.0006 ; reverse current emission coefficient
25+ ISC = 5E-12 ; base-collector leakage saturation current Controls the fall of reverse hFE at low currents
26+ NC = 1.6 ; base-collector leakage emission coefficient Controls the fall of reverse hFE at low currents
27+ BR = 110 ; ideal maximum reverse beta Controls peak reverse hFE
28+ IKR = 1.4 ; corner for reverse-beta high-current roll-off Current where rollof occurs
29+ VAR = 51 ; reverse Early voltage the reverse version of VAF.
30
31 ; ## DC Rb Parameters ##
32+ RB = 14.5 ; zero-bias (maximum) base resistance
33+ IRB = 8.00E-06 ; current at which Rb falls halfway to RBM
34+ RBM = 0.2 ; minimum base resistance
35
36 ; ## DC Re Parameters ##
37+ RE = 0.05 ; emitter ohmic resistance
38
39 ; ## DC Rc Parameters ##
40+ RC = 0.0375 ; collector ohmic resistance
41
42 ; ## AC base-emitter Parameters ##
43+ CJE= 2.17E-10 ; base-emitter zero-bias p-n capacitance controls Cbe.
44+ VJE = 0.75 ; base-emitter built-in potential
45+ MJE = 0.33 ; base-emitter p-n grading factor
46
47 ; ## AC base-collector Parameters ##
48+ CJC = 4E-11 ; base-collector zero-bias p-n capacitance control Ccb and how it varies with Vcb.
49+ VJC = 0.4347 ; base-collector built-in potential control Ccb and how it varies with Vcb.
50+ MJC = 0.3708 ; base-collector p-n grading factor control Ccb and how it varies with Vcb.
51+ XCJC = 1 ; fraction of CJC connected internally to Rb
52
53 ; ## AC substrate Parameters ##
54+ CJS = 0 ; substrate zero-bias p-n capacitance
55+ VJS = 0.75 ; substrate p-n built-in potential
56+ MJS = 0 ; substrate p-n grading factor
57
58 ; ## AC Transit Time Parameters ##
59+ TF = 780.0E-12 ; ideal forward transit time controls Ft and switching speeds.
60+ XTF = 0 ; transit time bias dependence coefficient
61+ VTF = 1E+20 ; transit time dependency on Vbc
62+ ITF = 0 ; transit time dependency on Ic
63+ PTF = 0 ; excess phase @ 1/(2p·TF)Hz
64+ TR = 9.00E-09 ; ideal reverse transit time controls switching storage times.
65
66 ; ##Temperature Parameters ##
67+ XTB = 1.3 ; forward and reverse beta temperature coefficient controls temperature effects on hFE. Try 1.6 for NPN, 1.9 for PNP
68+ XTI = 3 ; IS temperature effect exponent controls temperature effects on saturation current
69+ RCO = 0 ; epitaxial region resistance
70+ TRB1 = 0 ; RB temperature coefficient (linear)
71+ TRB2 = 0 ; RB temperature coefficient (quadratic)
72+ TRC1 = 0 ; RC temperature coefficient (linear)
73+ TRC2 = 0 ; RC temperature coefficient (quadratic)
74+ TRE1 = 0 ; RE temperature coefficient (linear)
75+ TRE2 = 0 ; RE temperature coefficient (quadratic)
76+ TRM1 = 0 ; RBM temperature coefficient (linear)
77+ TRM2 = 0 ; RBM temperature coefficient (quadratic)
78* T_ABS = ; absolute temperature
79+ T_MEASURED = 27 ; measured temperature
80* T_REL_GLOBAL = ; relative to current temperature
81+ QUASIMOD = 1 ; quasi-saturation model flag for temperature dependence 1= Gamma, RCO, VO temp dependance 0n. 0=off.
82+ CN = 2.42 ; quasi-saturation temperature coefficient for hole mobility defaults NPN 2.42, PNP 2.20
83+ D = 0.87 ; quasi-saturation temperature coefficient -hole carrier velocity defaults NPN 0.87, PNP 0.52
84+ FC = 0.5 ; forward-bias depletion capacitor coefficient
85
86+ EG = 1.11 ; bandgap voltage (barrier height)
87+ GAMMA = 1E-11 ; epitaxial region doping factor
88+ ISS = 0 ; substrate p-n saturation current
89
90
91+ NS = 1 ; substrate p-n emission coefficient
92+ QCO = 0 ; epitaxial region charge factor
93
94 ; ## Flicker Parameters ##
95+ AF = 1 ; flicker noise exponent
96+ KF = 0 ; flicker noise coefficient 0.0
97+ VG = 1.206 ; quasi-saturation extrapolated bandgap voltage at 0° K
98+ VO = 10 ; carrier mobility knee voltage
99
100* (c) 2019 Diodes Inc
101*
102* The copyright in these models and the designs embodied belong
103* to Diodes Incorporated (" Zetex "). They are supplied
104* free of charge by Zetex for the purpose of research and design
105* and may be used or copied intact (including this notice) for
106* that purpose only. All other rights are reserved. The models
107* are believed accurate but no condition or warranty as to their
108* merchantability or fitness for purpose is given and no liability
109* in respect of any use is accepted by Diodes Incorporated, its distributors
110* or agents.
111*
112* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
113* Oldham, United Kingdom, OL9 9LL
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